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GaN Dynamic On-Resistance (RDS(on)) Testing: the IWATSU ON Probe SS-350

Source: Probemart 2024-08-30 Views: 1918

Current collapse remains one of the biggest concerns for GaN power transistors, and instrument limitations make it hard to evaluate. With the IWATSU SS-350 probe you can build a repeatable, reliable double-pulse bench that measures the dynamic on-voltage (dynamic RDS(on)) of wide-bandgap devices - the best solution available worldwide today.

Current collapse remains one of the greatest concerns of many engineers regarding GaN power transistors, and due to limitations of test instruments, its evaluation is highly challenging. Engineers can use the IWATSU SS-350 probe to very conveniently create a repeatable and reliable double-pulse evaluation system that can reliably measure the dynamic on-state voltage drop (or dynamic Rds(on)) of wide-bandgap devices; this solution is currently the optimal solution worldwide for evaluating dynamic on-resistance.。


Reliable measurement of the dynamic on-state voltage drop (or dynamic Rds(on)) of wide-bandgap devices

The SS-350 is a specialized probe that can measure the voltage across the switch (ON voltage) when a switching device such as a MOSFET is turned on. By limiting (clamping) the high voltage generated when the switching device is turned off, the low on-state voltage can be measured more accurately.


Key features


■ Maximum input voltage +2,000 Vpeak
■ Clamping voltage +1.5 V / +2.5 V / +5.5 V
■ The IWATSU DS-8000 series can be used to set the clamp voltage and offset voltage and for power supply.

* This product is compatible only with IWATSU DS-8000 series oscilloscopes.

IWATSU SS-350 本体-2.png


Optimal applications


● Evaluation of the temperature dependence of on-resistance in SiC devices 

● Evaluation of on-resistance increase trends caused by current collapse in GaN devices 

● Detection of the effects of abnormal temperature rise in on-state voltage 

● Measurement of on-state voltage rise caused by overcurrent conditions


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Specifications: Basic performance


Signal input section
Connector Φ 4 mm banana plug
Input range -20 V peak to +2,000 V peak
Cable length 30 cm
Clamping voltage +1.5 V / +2.5 V / +5.5 V
Signal output section
Connector BNC
Output impedance 50Ω ±1%
Cable length 2 m
Attenuation ratio 5:1 (50 Ω output termination)


Output voltage ・Clamp voltage ±1.5 V selection: signal amplitude 0 V to +1.0 V (output voltage 0 V to +0.2 V)
・Clamp voltage ±2.5 V selection: signal amplitude 0 V to +2.0 V (output voltage 0 V to +0.4 V)
・Clamp voltage ±5.5 V selection: signal amplitude 0 V to +5.0 V (output voltage 0 V to +1 V)
Offset adjustment Adjustable to ±0.4 V or higher
Probe power connector
Connector Circular 6-pin
Cable length 2 m
Power supply Provided by the probe power port of the DS-8000 series oscilloscope
Probe control Clamp voltage and offset voltage can be set from the DS-8000 series oscilloscope

* The DS-8000 series can be used when the following conditions are met.
- Software version 7.1 or later
- For 4-channel computers, the FE1 version must be 1 or later; for 8-channel computers, the FE1 and FE2 versions must be 1 or later.


Dimensions and weight


Size 60 mm (width) × 28 mm (height) × 115 mm (depth) mm (excluding protruding parts)
Mass Approx. 350 g

Environmental characteristics


Guaranteed performance temperature +10°C ~ +35°C
Operating temperature 0°C ~ +40°C

SS-350 Operating Instructions


Application examples


Example of on-state voltage characteristics at the start of GaN device switching

プロービング例.png             ON電圧の変化.png

                 ● Probing example                                                              ● On-state voltage variation



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