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IWATSU SS-623XL Rogowski Probe 120A 10MHz 3mm 500mm IWATSU SS-623XL Rogowski Probe 120A 10MHz 3mm 500mm Brand: IWATSU Origin: Japan 3mm 线圈、XL型 500mm (10MHz)、10MHz 带宽、峰值 120A、灵敏度 50mV/A，耐压 5kV，−40~+125°C。适合 SiC 模块。 Brochure Manual Details
IWATSU SS-623L Rogowski Probe 120A 15MHz 3mm 300mm IWATSU SS-623L Rogowski Probe 120A 15MHz 3mm 300mm Brand: IWATSU Origin: Japan 3mm 线圈、L型 300mm (15MHz)、15MHz 带宽、峰值 120A、灵敏度 50mV/A，耐压 5kV，−40~+125°C。适合 SiC 模块。 Brochure Manual Details
IWATSU SS-622XL Rogowski Probe 60A 10MHz 3mm 500mm IWATSU SS-622XL Rogowski Probe 60A 10MHz 3mm 500mm Brand: IWATSU Origin: Japan 3mm 线圈、XL型 500mm (10MHz)、10MHz 带宽、峰值 60A、灵敏度 100mV/A，耐压 5kV，−40~+125°C。适合 SiC 模块。 Brochure Manual Details
IWATSU SS-622L Rogowski Probe 60A 15MHz 3mm 300mm IWATSU SS-622L Rogowski Probe 60A 15MHz 3mm 300mm Brand: IWATSU Origin: Japan 3mm 线圈、L型 300mm (15MHz)、15MHz 带宽、峰值 60A、灵敏度 100mV/A，耐压 5kV，−40~+125°C。适合 SiC 模块。 Brochure Manual Details
Probemart IWATSU Rogowski coil powered dedicated power supply adapter Probemart IWATSU Rogowski coil powered dedicated power supply adapter Brand: IWATSU Origin: China IWATSU Rogowski coil powered dedicated power supply adapter Brochure Manual Details
IWATSU SS-540 Hall-effect current probe AC/DC high-frequency clamp rated 30 A bandwidth 50 MHz IWATSU SS-540 Hall-effect current probe AC/DC high-frequency clamp rated 30 A bandwidth 50 MHz Brand: IWATSU Origin: Japan SS-540, rated current 30 A, bandwidth 50 MHz, measurement AC and DC clamp-on Brochure Manual Details
IWATSU SS-288A-H high-temperature-40 to 150 deg 6000 A high-frequency Rogowski current coil probe 1.7 mm for SiC device GaN test IWATSU SS-288A-H high-temperature-40 to 150 deg 6000 A high-frequency Rogowski current coil probe 1.7 mm for SiC device GaN test Brand: IWATSU Origin: Japan Isolated Current Probe. Detailed specifications are available in the product datasheet. Brochure Manual Details
IWATSU SS-287A-H high-temperature-40 to 150 deg 3000 A high-frequency Rogowski current coil probe 1.7 mm for SiC device GaN test IWATSU SS-287A-H high-temperature-40 to 150 deg 3000 A high-frequency Rogowski current coil probe 1.7 mm for SiC device GaN test Brand: IWATSU Origin: Japan Isolated Current Probe. Detailed specifications are available in the product datasheet. Brochure Manual Details
IWATSU SS-286A-H high-temperature-40 to 150 deg 1200 A high-frequency Rogowski current coil probe 1.7 mm for SiC device GaN test IWATSU SS-286A-H high-temperature-40 to 150 deg 1200 A high-frequency Rogowski current coil probe 1.7 mm for SiC device GaN test Brand: IWATSU Origin: Japan Isolated Current Probe. Detailed specifications are available in the product datasheet. Brochure Manual Details
IWATSU SS-285A-H high-temperature-40 to 150 deg 600 A high-frequency Rogowski current coil probe 1.7 mm for SiC device GaN test IWATSU SS-285A-H high-temperature-40 to 150 deg 600 A high-frequency Rogowski current coil probe 1.7 mm for SiC device GaN test Brand: IWATSU Origin: Japan Isolated Current Probe. Detailed specifications are available in the product datasheet. Brochure Manual Details
IWATSU SS-284A-H high-temperature-40 to 150 deg 300 A high-frequency Rogowski current coil probe 1.7 mm for SiC device GaN test IWATSU SS-284A-H high-temperature-40 to 150 deg 300 A high-frequency Rogowski current coil probe 1.7 mm for SiC device GaN test Brand: IWATSU Origin: Japan Isolated Current Probe. Detailed specifications are available in the product datasheet. Brochure Manual Details
IWATSU SS-281A-H/SS-282A-H high-temperature-40 to 150 deg 30 A/60 A high-frequency Rogowski current coil probe 1.7 mm for SiC device GaN test IWATSU SS-281A-H/SS-282A-H high-temperature-40 to 150 deg 30 A/60 A high-frequency Rogowski current coil probe 1.7 mm for SiC device GaN test Brand: IWATSU Origin: Japan Isolated Current Probe. Detailed specifications are available in the product datasheet. Brochure Manual Details

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