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IWATSU SS-664 ultra-fine 1 mm, SS-664P conductor diameter 1.2 mm high-frequency Rogowski current probe SiC device test TO-247-4 for
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IWATSU SS-663 ultra-fine 1 mm, SS-663P conductor diameter 1.2 mm high-frequency Rogowski current probe SiC device test TO-247-4 for
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IWATSU SS-662 ultra-fine 1 mm, SS-662P conductor diameter 1.2 mm high-frequency Rogowski current probe SiC device test TO-247-4 for
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IWATSU SS-630S/SS-630M Rogowski current probe 3 mm high-frequency 30000 A suitable for SiC module measurement
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IWATSU SS-628S/SS-628M Rogowski current probe 3 mm high-frequency 6000 A suitable for SiC module measurement
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IWATSU SS-627S/SS-627M Rogowski current probe 3 mm high-frequency 3000 A suitable for SiC module measurement
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IWATSU SS-626S/SS-626M Rogowski current probe 3 mm high-frequency 1200 A suitable for SiC module measurement
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IWATSU SS-625S/SS-625M Rogowski current probe 3 mm high-frequency 600 A suitable for SiC module measurement
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IWATSU SS-624S/SS-624M Rogowski current probe 3 mm high-frequency 300 A suitable for SiC module measurement
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IWATSU SS-623S/SS-623M Rogowski coil 3 mm high-frequency current probe 120 A suitable for SiC module measurement
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IWATSU SS-622S/SS-622M Rogowski current probe 3 mm high-frequency 60 A suitable for SiC module measurement
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IWATSU Rogowski coil SS-280A high-frequency 30M high-current 30000 A conductor diameter 1.7 mm for TO type MOSFET and IGBT


















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